PRODUCT INTRODUCTION - R&D Machine

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PRODUCT INTRODUCTION - R&D Machine PRODUCT INTRODUCTION - R&D Machine

Reactive Ion Etching(RIE)
RF Plasma Asher(MPB-612)
RF Plasma Asher(A200)
Laser Marker
Wetstation(AWSE01)
PECVD
Halogen Illumination
Reformer Evaluation System

Reactive Ion Etching
Model	RIE
Machine Dimension	W1470 L1000 H1800
Substrate size	1~4" wafer
Substrate batch	1 wafer
RF power	600w, 13.56MHz
Process gas or fluid	O2, He, CF4, SF6
Substrate motion	Manual
System control	touch pc
Base pressuse	≤5.0E-7 torr

RF Plasma Asher
Model	MPB-612
Machine Dimension	W950 X L1190 X H1615
Substrate size	1~6" wafer
Substrate batch	50 wafer / batch
RF power	1Kw, 13.56MHz
Process gas or fluid	O2, N2
Process temp	Max 80~150(℃)
Substrate motion	Auto load
System control	Full auto, touch pc
Base pressuse	≤1.0E-2 torr

RF Plasma Asher
Model	A200
Machine Dimension	W870 L1100 H1900
Substrate size	1~4" wafer
Substrate batch	1 wafer
RF power	600w, 13.56MHz
Process gas or fluid	O2, N2
Substrate motion	Manual
System control	touch pc
Base pressuse	≤5.0E-3 torr

Laser Marker
Nd:YVO4 Laser Marking System	· UV Nd:YVO4 Laser · System Controller · Cutting controller & Software · 1,000W RF power & matching system
Wafer Loading & Unloading System	· 6" Wafer · Auto Loading & Unloading · Single Arm Vacuum Robot · LM & Timing Belt Syste,
Wafer Flat Zone Aligner	· Rotating & Sampling System · Mechanical Alignment Part
Wafer Cassette Elevator System	· 6" Wafer, 25 Slot Cassette 1EA loading · LM & Ball Screw System
Frame	· Size : 92010001564(H)mm
Utility	· Main Power : 220V 60Hz 50A · Air : 5~6kgf/cm2
SYSTEM	· PC controlled–PLC based system

Wetstation
Model	AWSE01
Machine Dimension	W2200 L1500 H1900
Substrate size	6" wafer
Substrate batch	50 wafer
Process gas or fluid	Acid
Process temp	Max 100(℃)
Substrate motion	Auto load (2 cassette)
System control	Full auto, Touch panel
Chemical bath	Quatz 4t, leak safety barrel, Heating system
QDR rinse bath	Over flow type DI shower, N2 bubbling

PECVD
· Stand alone Dual chamber , Aluminum body chamber
· Load Lock Version with (2) two process modules
· PC controlled–windows based system
· Advanced Energy RFPP - RF5S power supply (500W – 13.56MHz)
· Advanced Energy AM5 matching network w/tuner
· Heated Chuck
· Watlow controller ~400도
· 11” showerhead
· 8 gas MFC’s - N2 : 5000 SCCM - CF4 : 500 SCCM - N2O : 1500 SCCM - O2 : 100 SCCM - N2 : 1000 SCCM - He/Ar : 3000 SCCM - NH3 : 20 SCCM - SiH4 : 350 SCCM
· Can process up to 2” Wafer 4ea
· Throttle Valve & Gate Valve
· 1720 x 1050 x 1900 (mm)

Halogen Illumination
Model	HSP-250W
Size	W125 X H328 X D130 mm
Irradiation area	60mm
Illuminance	More than 400,000 lx
Irradiation Distance	220mm
Light Source	Halogen lamp (Applying cold mirror)
Lamp Type/Consumed power	ELC 500 24V 250W / AC220V 60Hz/DC 24V 350W
Color Temp	3400 °K
Tone	White
Environmental Temp	0 ~ 40℃
Connection Pole size	20 Φ

Reformer Evaluation System
Model	RES
Machine Dimension	W1900 L1300 H2000
Composition
NG blower
DI water pump
Gas mixer
Heat exchanger
Phone trans
Heater
Hydrogen flow meter
Water trap
Capacity 5Kw

Address: Room 812, 120, Daehwa-ro, Daedeok-gu, Daejeon, Republic of Korea ㅣ TEL : +82 42-933-4244~5ㅣ
Fax : +82 42-933-4247ㅣ E-mail : 4meo@4meo.co.krㅣ Business hours: Monday to Friday 09:00 ~ 18:00 (closed on Saturdays, Sundays and Holidays)ㅣ

R&D Machine introduction