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R&D Machine

제품사양

MPB-610 (RF Plasma Ashing System)

MPB-610 (RF Plasma Ashing System)
Machine Dimension W640 X L1730 X H1490
Substrate Size 1~ 6”Si Wafer
Substrate Batch 50 Wafer / Batch
RF Power 1Kw , 13.56MHz
Process Gas O2 , N2
Process Temperature Max. 80℃ ~ 150℃
Substrate motion Auto Load / Unload Type
System Control Semi Auto , Full Auto
Base Pressure ≤ 10-2 Torr
System Data Base 공정변수 Recipe별 저장 및 그래프표현

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