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R&D Machine

제품사양

STD-RF Plasma Ashing System

STD-RF Plasma Ashing System
Model MPB-611
Machine Dimension W950 X L1190 X H1615
Substrate Size 1~ 6”Si Wafer
Substrate Batch 50 Wafer / Batch
RF Power 1Kw , 13.56MHz
Process Gas O2 , N2
Process Temperature Max. 80℃ ~ 150℃
Substrate Motion Auto Load / Unload Type
System Control Semi Auto , Full Auto, Touch PC Control
Base Pressure ≤ 10-2 Torr
System Data Base 공정변수 Recipe별 저장 및 그래프 표현

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